Loading of the electron beam (atoms and ions)
1. injection of gases by controlled UHV (Ultra High Vacuum) all-metal-valve
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Direct gas injection of Hydrogen, Helium, Carbon
compounds (propane, methane), Nitrogen, Oxygen,
Neon, Argon, Krypton, Xenon...
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2. injection of metals and other elements from volatile compounds (MIVOC)
The MIVOC (Metal Ions from VOlatile Compounds) method has been applied to admit metal ions.
Organic substances are used that contain only carbon, hydrogen and/or oxygen along with the metal atoms.
These compounds, such as metalocenes, hexacarbonyl, or tetramethyl, have a high vapor pressure and thus evaporate easily at room temperature.
The organometallic substances are placed in a separate vacuum chamber which is connected to one of the precision leak valves.
In this method, metal-organic compounds are used,
whose evaporation pressures allow it, to inject them
as gases into the ion source.
The electon beam can be loaded with Silicon,
Phosphorus, Titanium, Manganese,
Iron, Nickel, Zinc, Germanium,
Tin, Tungsten, Magnesium,
Cobalt, Chrome, Molybdenum,
Ruthenium, Antimony, Tellurium,
Osmium...
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| Metalocene molecule (C5H5)2Me
used to supply the trap with ions such as iron and nickel
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| Tetramethyl molecule (CH3)4Me
used to supply the trap with ions such as tin and germanium
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3. injection of metals by an external ion source and a quadrupole bender (Charge Breeding)
Single charged ions can be created by an external ion source (for example a LMIS) and injected by a quadrupole beam bender into an EBIS for higher
ionization (as demonstrated in the figure for the means of Gold ions).
The Charge Breeding with Dresden EBIS/T systems has been demonstrated by:
A. Silze, G. Zschornack, S. Geyer, O. Kester, A. Sokolov, G. Vorobjev, and F. Ullmann
GSI SCIENTIFIC REPORT 2008, INSTRUMENTS-METHODS-37, p.254
 print
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