Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS)/title></head><BODY OnLoad="javascript:print();"><TR><TD COLSPAN="2" HEIGHT="13" BGCOLOR="#326799"></TD></TR><TR><TD COLSPAN="2" HEIGHT="4" BGCOLOR="#C6DCF0"></TD></TR><TR><TD WIDTH="780" BGCOLOR="#FFFFFF" VALIGN="TOP" ALIGN="LEFT"><TABLE CELLPADDING="15"><TR><TD> <strong><FONT SIZE="+1" FACE="VERDANA">Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS)</FONT></strong><BR><BR> Time-of-Flight Secondary Ion Mass Spectroscopy (TOF – SIMS) is a surface – sensitive spectroscopy that uses a pulsed ion beam to remove secondary ions from a very outermost surface of the sample. After the secondary ions are removed the ions get accelerated and will be transported to the detector with their different speeds. The detector records the mass of the secondary ions that is depending on its speed.<BR><BR> The TOF – SIMS method provides information about the molecular composition of the topmost atom layer. In fact of the high mass resolution it is possible to provide a certain mass solution of chemical components of the surface.<BR><BR> The following animation shows the working principle of a combined FIB and TOF-SIMS using a DREEBIT ion source for the production of highly charged ions:<BR><BR> <object classid="clsid:D27CDB6E-AE6D-11cf-96B8-444553540000" codebase="http://download.macromedia.com/pub/shockwave/cabs/flash/swflash.cab#version=9,0,28,0" width="700" height="600" title="Flash"> <param name="movie" value="dreebit_tof_sims.swf" /> <param name="quality" value="high" /> <embed src="dreebit_tof_sims.swf" quality="high" pluginspage="http://www.adobe.com/shockwave/download/download.cgi?P1_Prod_Version=ShockwaveFlash" type="application/x-shockwave-flash" width="583" height="500"></embed> </object> <BR><BR><BR> The use of highly charged ions in TOF-SIMS applications provides unprecedented possibilities. DREEBITs ion sources are an appropriate platform technology for a TOF-SIMS device using highly charged ions.<BR><BR> <STRONG><FONT SIZE="2" COLOR="#000080" FACE="VERDANA">Advantages of TOF-SIMS analytic setups using highly charged ions:</FONT></STRONG><BR><BR> <UL> <LI>Extremely sensitive surface analysis <LI>High rates of <UL> <LI>Secondary ions <LI>Secondary molecules <LI>Secondary cluster <LI>Secondary electrons </UL> <LI>Extremely wide spectrum of the available primary ions for the surface sputtering process (including inert gas ions) <LI>Short changeover times at the transition between one kind of primary ions and an other </UL> <STRONG><FONT SIZE="2" COLOR="#000080" FACE="VERDANA">Applications:</FONT></STRONG><BR><BR> <UL> <LI>Surface spectroscopy <LI>Surface mapping <LI>Recording of depth profiles </UL> </TD></TR></TABLE></TD></TR>